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Faculty Member

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Muhammad Shaffatul Islam

Assistant Professor
(On study leave)

M.Sc in EEE (Khulna University of Engineering & Technology)
B.Sc in EEE ( American International University of Bangladesh)

ORCID: https://orcid.org/0000-0002-3538-2315

Google Scholar: https://scholar.google.com/citations?user=TFTDnX4AAAAJ&hl=en

Research Gate: https://www.researchgate.net/profile/Muhammad_Islam16

Short Biography:

Muhammad Shaffatul Islam received the B.Sc. degree in electrical and electronic engineering from American International University-Bangladesh (AIUB), Dhaka, Bangladesh, in 2010, the M.Sc. degree in electrical and electronic engineering from the Khulna University of Engineering & Technology (KUET), Khulna, Bangladesh, in 2015. He is currently a Lecturer with the Department of Electrical and Electronic Engineering, World University of Bangladesh (WUB), Dhaka., His current research interests include III–V-based single- and double-gate MOSFET and the crystal orientation dependent characteristics of devices.

Journal Section

  1. Abul Hasan Touhid,Muhammad Shaffatul Islam (2010) Performance Analysis of Ill-Nitride based patch antenna for cancer imaging,” International Conference on Physics,BUET

  2. Muhammad Shaffatul Islam ,Swadesh Podder,Abul Hasan Touhid, (2011) Breast Cancer Detection Using Indium Nitride Based Microstrip Patch Antenna. 9th International Conference on Nitride Semiconductors,Glasgow, Scotland

  3. Muhammad Shaffatul Islam, Mamunur Rashid, Mohammed Tarique (2011). Performance Analysis of WiFi/WiMAX system under Different Codecs. International Journal of Computer Applications (IJCA), Vol.l8, Issue.6, pp.13-19.

  4. Muhammad Shaffatul Islam, Aid. Adnan Riaz, Mohammed Tariqu. (2012). Performance Analysis of the Routing Protocols for video streaming over Mobile Ad Hoc Networks. International Journal of Computer Networks and Communication (IJCNC) ,Vol.4, No.3,pp.133-150.(2012).

  5. Md. Nur Kutubul Alam, Muhammad Shaffatul Islam, Aid. Golam Kibria, Md. Rafiqul Islam (2014). Anomalous Staircase CV Characteristics of InGaSb-on-Insulator FET. IEEE Transaction on Electron Devices, Vol.61, Issue.11,pp.3910-3913.

  6. Muhammad Shaffatul Islam , Md Nur Kutubul Alam, Md.Rafiqul Islam (2014) InGaSb n-MOSFET: Effect of Interface states on CV characteristics. International Journal of Nanotechnology (IJNT),Vol.ll,No.l/2/3/4.pp.85-96.

  7. Md. Nur Kutubul Alam, Muhammad Shaffatul Islam, Golam Kibria, Md. Rafiqul Islam (2020). On the Ballistic Performance of InGaSb XOI FET: Impact of Channel Thickness and Interface States. IEEE Transaction on Electron Devices, Vol.62, Issue.06,pp.1855-1861.

  8. Anika Amin, Md. Tanvir Hasan,Muhammad Shaffatul Islam (2017), The effects of inter-dot spacing and dot size on the performance of InGaAs/GaAs QDIBSC” International Journal of Photoenergy,Vol.2017, pp.1-10.

  9. Khan, Md. Sakib Hasan, Md. Rafiqul Islam, Muhammad Shaffatul Islam, Ibrahim M. Mehadi, Md. Tanvir Hasan (2020).Tunable Photocatalytic Properties of Planar GaN/GeC Hetero-Bilayer: Production of H2 Fuel.” IEEE Access, vol. 8, 2020, pp. 209030–209042

Conference Section

  1. Muhammad Shaffatul Islam ,Md. Nazmul Alam, Md. Shah Alam, Adnan Riaz, Md. Tanvir Hasan (2010). Performance Analysis of various vocoders in Mobile AD Hoc Network(MANET). 6th International Conference on Electrical and Computer Engineering (ICECE),(pp. 670-673

  2. Md. Nir Kutubul Alam,Md. Osman Goni Nayeem,Muhammad Shaffatul islam (2012). Md.Rafiqul Islam. Ultra High Current Gain InGaAsSb DHBT with compositional graded Base. 7th International Conference on Electrical and Computer Engineering (ICECE),(pp. 799-901)

  3. Muhammad Shaffatul islam Md. Osman Goni Nayeem,Md. Nur Kutubul Alam, Md.Rafiqul Islam (2012).InGaSb n-MOSFET: Modeling and Performance Analysis. 7th International Conference on Electrical and Computer Engineering (ICECE),(pp. 663-666)

  4. Md. Nur Kutubul Alam,Muhammad Shaffatul islam, Md.Rafiqul Islam (2013). SelfConsistent Quasi-Static CV characteristics of InGaSb XOI FET. 2013 International Conference on Electron Devices and Solid-State Circuits (EDSSC), ,(pp. 1-2)

  5. Md. Nur Kutubul Alam,Muhammad Shaffatul islam, Md.Rahqul Islam (2013. Capacitance Voltage Characterization of InAsSb XOI FET. 2013 International Conference on Electron Devices and Solid-State Circuits (EDSSC), ,(pp. 1-2)

  6. Muhammad Shaffatul islam ,Md. Nur Kutubul Alam, Md.Rahqul Islam (2013) .Self-Consistent Quasi-Static CV Characterization of InGaSb Buried channel nMOSFET. 5th International Nanoelectronics Conference (INEC),(pp. 94-96)

  7. Muhammad Shaffatul islam ,Md. Nur Kutubul Alam, Md.Rahqul Islam (2013). InGaSb n-MOSFET: Effect of Interface states on CV characteristics. 5th Intern-ational Nanoelectronics Conference (INEC)

  8. Md. Nur Kutubul Alam,Muhammad Shaffatul islam, Md.Rahqul Islam (2014). Influence of band parameter of gate dielectrics on the ballistic performance at same EOT. 8th International Conference on Electrical and Computer Engineering (ICECE),(pp. 663-666)

  9. Md. Nur Kutubul Alam,Muhammad Shaffatul islam, Md.Rahqul Islam (2014) .Ballistic performance comparison of InGaSb and InAsSb XOI nFET. 8th International Conference on Electrical and Computer Engineering (ICECE),(pp. 659-662)

  10. Md. Nur Kutubul Alam, Muhammad Shaffatul islam, Md.Rafiqul Islam (2014). Short channel InGaSb-on-insulator FET: With and without junctions. 2014 International Nanoelectronics Conference (INEC),(pp. 1-5)

  11. Muhammad Shaffatul islam ,Md. Nur Kutubul Alam, Md.Rahqul Islam (2014). Effect of gate length on the ballistic performance of nanoscale InGaSb double gate MOSFET. International Conference on Informatics, Electronics and Vision (ICIEV) (pp. 1-4)

  12. Safayet Ahmed, Md. Tanvir Hasan, Muhammad Shaffatul Islam (2016). Effect of symmetrical underlap length on device performance of a GaN-based double gate MOSFET. International Conference on Electrical and Electronic Engineering (International Conference on Informatics, Electronics and Vision (ICIEV) (pp. 1001-1004)

  13. Sayeda Anika Amin,Md. Tanvir Hasan, Muhammad Shaffatul Islam (2016). InxGa 1-x As/GaAs-based Intermediate Band Solar Cell: Effects of Quantum Dots.IEEE TENCON.

  14. Safayet Ahmed,Iktikham Bin Taher, Md. Tanvir Hasan, Muhammad Shaffatul Islam. (2016) GaN-based Double Gate MOSFETs:Effects of Gate Length. IEEE TENCON

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